The MAX9982 fully integrated SiGe mixer is optimized to meet the demanding requirements of GSM850, GSM900, and CDMA850 base-station receivers. Each high-linearity device includes a local oscillator (LO) switch, LO driver, and ctive mixer. On-chip baluns are also integrated to allow for single-ended RF and LO inputs. Since the active mixer provides 2dB of conversion gain, the device effectively replaces the IF amplifier stage, which typically follows most passive mixer implementations.
The MAX9982 provides exceptional linearity with an input IP3 of greater than +26dBm. The integrated LO driver allows for a wide range of LO drive levels from -5dBm to +5dBm. In addition, the built-in switch enables rapid LO selection of less than 250ns, as needed for GSM frequency-hopping applications.
The MAX9982 is available in a 20-pin QFN package (5mm ✕ 5mm) with an exposed paddle and is specified over the -40°C to +85°C extended temperature range.
Vcc.......................................................................-0.3V to +5.5V
IF+, IF-, RFBIAS, LOSEL.............................-0.3V to (VCC + 0.3V)
TAP ...................................................................................+5.0V
RFBIAS Current....................................................................5mA
RF, LO1, LO2 Input Power .............................................+20dBm
Continuous Power Dissipation (TA = +70°C)
20-Pin QFN (derate 20.8mW/°C above TA = +70°C) ....1.66W
Operating Temperature Range .........................40°C to +85°C
Junction Temperature.....................................................+150°C
Storage Temperature Range ..........................-65°C to +150°C
Lead Temperature (soldering, 10s) ................................+300°C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.